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BPW 21
Silizium-Fotodiode fur den sichtbaren Spektralbereich Silicon Photodiode for the visible spectral range
BPW 21
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 350 nm bis 820 nm q Angepat an die Augenempfindlichkeit (V) q Hermetisch dichte Metallbauform (ahnlich TO-5) Anwendungen
q Belichtungsmesser fur Tageslicht q Fur Kunstlicht mit hoher Farbtemperatur in
Features q Especially suitable for applications from 350 nm to 820 nm q Adapted to human eye sensitivity (V) q Hermetically sealed metal package (similar to TO-5) Applications
q Exposure meter for daylight q For artificial light of high color temperature in
der Fotografie und Farbanalyse
photographic fields and color analysis
Typ Type BPW 21
Bestellnummer Ordering Code Q62702-P885
Semiconductor Group
1
1998-11-13
fmo06011
BPW 21
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 80 235 Einheit Unit C C
Top; Tstg TS
VR Ptot
10 250
V mW
Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol Wert Value 10 ( 5.5) 550 350 ... 820 Einheit Unit nA/lx nm nm
S
S max
S = 10 % von Smax
Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle
A LxB LxW H
7.34 2.73 x 2.73
mm2 mm x mm
1.9 ... 2.3
mm
55
Grad deg.
Semiconductor Group
2
1998-11-13
BPW 21
Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (cont'd) Bezeichnung Description Dunkelstrom Dark current VR = 5 V VR = 10 mV Spektrale Fotoempfindlichkeit, = 550 nm Spectral sensitivity Quantenausbeute, = 550 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom, Ev = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 k; VR = 5 V; = 550 nm; Ip = 10 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 5 V, = 550 nm Nachweisgrenze, VR = 5 V, = 550 nm Detection limit Symbol Symbol Wert Value Einheit Unit
IR IR S
2 ( 30) 8 ( 200) 0.34 0.80 400 ( 320) 10 1.5
nA pA A/W Electrons Photon mV A s
VO ISC tr, tf
VF C0 TCV TCI NEP
1.2 580 - 2.6 - 0.05 7.2 x 10- 14
V pF mV/K %/K W Hz cm * Hz W
D*
1 x 1012
Semiconductor Group
3
1998-11-13
BPW 21
Relative spectral sensitivity Srel = f ()
Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev)
Total power dissipation Ptot = f (TA )
Dark current IR = f (VR)
Capacitance C = f (VR), f = 1 MHz, E = 0
Dark current IR = f (TA), VR = 5 V
Directional characteristics Srel = f ()
Semiconductor Group
4
1998-11-13

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